High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors-Reference-Cited by-同舟云学术

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High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

Published:2018-02 Issue: Volume:483 Page:89-93
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Charles M.,Baines Y.,Bavard A.,Bouveyron R.

Funder

ENIAC

The National Centre for Research and Development

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Power electronics with wide bandgap materials: Toward greener, more efficient technologies

2. Investigation of MOCVD growth parameters on the quality of GaN epitaxial layers

3. High growth rate metal organic vapor phase epitaxy GaN

4. MOVPE growth of GaN on Si(111) substrates

5. A. Karen Reinhardt, Werner Kern, Handbook of Silicon Wafer Cleaning Technology, William Andrew Publishing, second ed., Norwich, NY, USA, 2008.

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1. Study of GaN coalescence by dark-field X-ray microscopy at the nanoscale;Journal of Applied Crystallography;2023-04-25

2. Avoiding Gallium Pollution in Close‐Coupled Showerhead Reactors, Alternative Process Routes;physica status solidi (a);2023-04-14

3. H2 based etching of GaN for re-grown gallium-free InAlN barriers giving very low 2DEG sheet resistance of 185 Ω/sq;Journal of Crystal Growth;2022-06

4. Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications;physica status solidi (a);2021-01-15

5. Development of Integrated Thermoelectric Sensors for Power Components;IEEE Sensors Journal;2021

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