Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications-Reference-Cited by-同舟云学术

Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

Published:2021-01-15 Issue:6 Volume:218 Page:2000469
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Zhang Yuxuan¹,Chen Zhaoying¹,Li Wenbo¹,Arehart Aaron R.¹,Ringel Steven A.¹,Zhao Hongping¹²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering The Ohio State University Columbus OH 43210 USA

2. Department of Materials Science and Engineering The Ohio State University Columbus OH 43210 USA

Funder

U.S. Department of Energy

Advanced Research Projects Agency

Office of Energy Efficiency and Renewable Energy

Office of Naval Research

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000469

Reference62 articles.

1. Power GaN Devices

2. A GaN bulk crystal with improved structural quality grown by the ammonothermal method

3. Excellent crystallinity of truly bulk ammonothermal GaN

4. Bulk ammonothermal GaN

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