Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Comparison of radiative and structural properties of 1.3 μm InxGa(1−x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties
2. Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots
3. Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots
4. Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
5. Quantum dots: lasers and amplifiers
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of low-temperature cover layer growth of InAs/GaAs quantum dots on their optical properties;Japanese Journal of Applied Physics;2022-07-28
2. Impact of dislocations in InAs quantum dot with InGaAs strain-reducing layer structures on their optical properties;Japanese Journal of Applied Physics;2021-02-24
3. Quantum Dots;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
4. Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures;Physica B: Condensed Matter;2016-01
5. Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy;Journal of Crystal Growth;2015-03
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