Indirect in situ characterization of Si(100) substrates at the initial stage of III–V heteroepitaxy-Reference-Cited by-同舟云学术

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Indirect in situ characterization of Si(100) substrates at the initial stage of III–V heteroepitaxy

Published:2011-01 Issue:1 Volume:315 Page:16-21
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Döscher Henning,Supplie Oliver,Brückner Sebastian,Hannappel Thomas,Beyer Andreas,Ohlmann Jens,Volz Kerstin

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Polar-on-nonpolar epitaxy;Kroemer;J. Cryst. Growth,1987

2. Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate;Kunert;Thin Solid Films,2008

3. In situ verification of single-domain III–V on Si(100) growth via metal-organic vapor phase epitaxy;Döscher;Appl. Phys. Lett.,2008

4. RDS, LEED and STM of the P-rich and Ga-rich surfaces of GaP(100);Töben;Surf. Sci.,2001

5. P-rich GaP(001) (2×1)/(2×2) surface: a hydrogen-adsorbate structure determined from first-principles calculations;Hahn;Phys. Rev. B,2003

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1. Surface structure of MOVPE-prepared As-modified Si(100) substrates;Applied Surface Science;2024-11

2. Dangling Bond Defects on Si Surfaces and Their Consequences on Energy Band Diagrams: From a Photoelectrochemical Perspective;Solar RRL;2023-02-17

3. Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy;Journal of Semiconductors;2022-12-01

4. Interfacial intermixing and anti-phase boundaries in GaP/Si(0 0 1) heterostructures;Journal of Crystal Growth;2021-05

5. Monolithic III/V integration on (001) Si substrate;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

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