Analysis of SiC crystal sublimation growth by fully coupled compressible multi-phase flow simulation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. A novel method to increase the growth rate in sublimation crystal growth of advanced materials
2. Increase of SiC sublimation growth rate by optimizing of powder packaging
3. NUMERICAL SIMULATION OF BUOYANT AND THERMOCAPILLARY CONVECTION IN A SQUARE CAVITY
4. Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas
5. Thermodynamic Heat Transfer and Mass Transport Modeling of the Sublimation Growth of Silicon Carbide Crystals
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