Author:
Hoffmann V.,Knauer A.,Brunner C.,Einfeldt S.,Weyers M.,Tränkle G.,Haberland K.,Zettler J.-T.,Kneissl M.
Funder
Deutsche Forschungsgemeinschaft
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Free-standing gan substrates by hydride vapor phase epitaxy;Park;Japanese Journal of Applied Physics Part 2 Letters,2000
2. Gan boule growth: apathway to gan wafers with improved material quality;Vaudo;Physica Status Solidi (a),2002
3. Advances in bulk crystal growth of aln and gan;Ehrentraut;MRS bulletin,2009
4. High-power and long-lifetime ingan multi-quantum-well laser diodes grown on low-dislocation-density gan substrates;Nagahama;Japanese Journal of Applied Physics,2000
5. O. Goto, S. Tomiya, Y. Hoshina, T. Tanaka, M. Ohta, Y. Ohizumi, Y. Yabuki, K. Funato, M. Ikeda, High power pure-blue semiconductor lasers, vol. 6485, SPIE, 2007, p. 64850Z.
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