Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals
Author:
Funder
EPSRC
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Growth of M-plane GaN(100) on γ-LiAlO
2. Optical properties of GaN layers grown on C-, A-, R-, and M-plane sapphire substrates by gas source molecular beam epitaxy
3. Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy
4. Room temperature green light emission from nonpolar cubic InGaN∕GaN multi-quantum-wells
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1. Development of AlN integrated photonic platform for octave-spanning supercontinuum generation in visible spectrum;Ultrawide Bandgap Semiconductors;2021
2. Heavy and light exciton states in c-AlGaN/GaN asymmetric double quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2020-10
3. Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite Al x Ga 1-x N;Progress in Crystal Growth and Characterization of Materials;2017-06
4. Photoluminescence of magnesium and silicon doped cubic GaN;physica status solidi (c);2014-01-28
5. RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer;Journal of Crystal Growth;2013-09
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