RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Growth of atomically smooth cubic AlN by molecular beam epitaxy
2. Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals
3. Heteroepitaxial wurtzite and zinc‐blende structure GaN grown by reactive‐ion molecular‐beam epitaxy: Growth kinetics, microstructure, and properties
4. RF-MBE growth of cubic InN films on MgO (001) substrates
5. MBE growth of cubic AlN films on MgO substrate via cubic GaN buffer layer
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1. Effect of two-step cubic GaN buffer layer on the radio-frequency plasma-assisted molecular beam epitaxy growth of cubic AlN films grown on MgO (001) substrates;Thin Solid Films;2023-11
2. TEM Investigation of Stacking Faults Defect Taken Along [100] Zone Axis of Cubic AlN on MgO (001) Substrate with Using 2-Step Growth Cubic GaN Buffer Layer by PAMBE;Integrated Ferroelectrics;2023-09-02
3. Numerical Simulation of Rapid Nitriding of Aluminum via Pulsed Laser;Industrial & Engineering Chemistry Research;2023-04-17
4. GaN growth on (0 0 1) and (1 1 0) MgO under different Ga/N ratios by MBE;Journal of Crystal Growth;2022-07
5. Aluminium nitride cubic modifications synthesis methods and its features. Review;Journal of the European Ceramic Society;2017-04
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