Effect of two-step cubic GaN buffer layer on the radio-frequency plasma-assisted molecular beam epitaxy growth of cubic AlN films grown on MgO (001) substrates-Reference-Cited by-同舟云学术

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Effect of two-step cubic GaN buffer layer on the radio-frequency plasma-assisted molecular beam epitaxy growth of cubic AlN films grown on MgO (001) substrates

Published:2023-11 Issue: Volume:784 Page:140065
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Discharoen Nutthapong,Sanorpim Sakuntam^ORCID,Nuntawong Noppadon,Yordsri Visittapong,Kijamnajsuk Suphakan^ORCID,Onabe Kentaro

Funder

Chulalongkorn University

Thailand Research Fund

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. The growth and optical properties of large, high quality AlN single crystals;Strassburg;J. Appl. Phys.,2004

2. Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing;Miyake;J. Cryst. Growth,2016

3. RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer;Kakuda;J. Cryst. Growth,2013

4. Investigation of AlN thin film growth on MgO (111) substrates using low temperature helicon sputtering system;Hsu;J. Cryst. Growth,2016

5. MBE growth of cubic AlN films on MgO substrate via cubic GaN buffer layer;Kakuda;Phys. Status Solidi C,2012

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