Investigation of AlN thin film growth on MgO(111) substrates using low temperature helicon sputtering system
Author:
Funder
Taiwan National Science Council
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. High-excitation and high-resolution photoluminescence spectra of bulk AlN
2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
3. Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors
4. Characterization of threading dislocations in GaN epitaxial layers
5. Highly c-axis oriented AlN layers grown on c-plane sapphire substrates by radio-frequency sputter epitaxy at 1080°C
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1. Effect of two-step cubic GaN buffer layer on the radio-frequency plasma-assisted molecular beam epitaxy growth of cubic AlN films grown on MgO (001) substrates;Thin Solid Films;2023-11
2. Influence of the Addition of the Elements Ti and Cr on the Structure, and Mechanical and Tribological Properties of AlSiN Coatings;Journal of Nano Research;2022-05-10
3. Effects of AlN substrate orientation on crystalline quality of wurtzite GaN films investigated via molecular dynamics;Computational Materials Science;2022-02
4. Optimization of ruthenium as a buffer layer for non-collinear antiferromagnetic Mn3X films;Journal of Applied Physics;2020-04-30
5. Monolayer MoS2 Enabled Single-Crystalline Growth of AlN on Si(100) Using Low-Temperature Helicon Sputtering;ACS Applied Nano Materials;2019-03-07
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