Monolayer MoS2 Enabled Single-Crystalline Growth of AlN on Si(100) Using Low-Temperature Helicon Sputtering
Author:
Affiliation:
1. Department of Electronic Engineering, Chung Yuan Christian University, Chung-Li 32023, Taiwan
2. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
Funder
Ministry of Science and Technology, Taiwan
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.8b02358
Reference34 articles.
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