TEM Investigation of Stacking Faults Defect Taken Along [100] Zone Axis of Cubic AlN on MgO (001) Substrate with Using 2-Step Growth Cubic GaN Buffer Layer by PAMBE-Reference-Cited by-同舟云学术

TEM Investigation of Stacking Faults Defect Taken Along [100] Zone Axis of Cubic AlN on MgO (001) Substrate with Using 2-Step Growth Cubic GaN Buffer Layer by PAMBE

Published:2023-09-02 Issue:1 Volume:237 Page:27-37
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Discharoen N.¹^ORCID,Sanorpim S.¹²^ORCID,Nuntawong N.³^ORCID,Yordsri V.⁴^ORCID,Onabe K.⁵^ORCID

Affiliation:

1. Nanoscience and Technology, Graduate School, Chulalongkorn University, Bangkok, Thailand

2. Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok, Thailand

3. National Electronics and Computer Technology Center (NECTEC), Thailand Science Park, Pathum Thani, Thailand

4. National Metal and Materials Technology Center (MTEC), Thailand Science Park, Pathum Thani, Thailand

5. Department of Advanced Materials Science, The University of Tokyo, Chiba, Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2023.2227049

Reference14 articles.

1. AlN film thickness effect on photoluminescence properties of AlN/carbon nanotubes shell/core nanostructures for deep ultra-violet optoelectronic devices

2. Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

3. Interface characteristics of cubic AlN film on MgO (100) substrate

4. AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices

5. Formation of aluminum nitride films on GaAs(110) at room temperature by reactive molecular‐beam epitaxy: X‐ray and soft x‐ray photoemission spectroscopy