The K2S2O8–KOH photoetching system for GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Dislocation Etch Pits in GaN Epitaxial Layers Grown on Sapphire Substrates
2. Recent advances in defect-selective etching of GaN
3. Defect-selective etching of GaN in a modified molten bases system
4. Evaluation of nanopipes in MOCVD grown (0001) GaN/Al2O3 by wet chemical etching
5. Highly anisotropic photoenhanced wet etching of n-type GaN
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