Defect-selective etching of GaN in a modified molten bases system
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Recent advances in defect-selective etching of GaN
2. Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy
3. Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals
4. Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressure
5. Chemical polishing of bulk and epitaxial GaN
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