Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

Published:2001-03 Issue:1-3 Volume:80 Page:318-321
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Weyher J.L.,Albrecht M.,Wosinski T.,Nowak G.,Strunk H.P.,Porowski S.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Gettering or generation of the EL2 defects at dislocations in GaAs?

2. EBIC investigation of α and β dislocations in GaAs

Cited by 50 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unveiling the effect of crystal orientation on gallium nitride cutting through MD simulation;International Journal of Mechanical Sciences;2023-12

2. An Experimental Study of Dislocation Dynamics in GaN;Micromachines;2023-06-02

3. Formation of a-type dislocations near the InGaN/GaN interface during post-growth processing of epitaxial structures;Journal of Applied Physics;2023-01-25

4. Structural and mechanical modifications of GaN thin films by swift heavy ion irradiation;Vacuum;2022-01

5. Estimations of Activation Energy for Dislocation Mobility in p-GaN;ECS Journal of Solid State Science and Technology;2021-02-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP