Defect structure of 4H silicon carbide ingots
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Dislocation processes during SiC bulk crystal growth
2. Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots Via Physical Vapor Transport (PVT)
3. Polytype Control in 6H-SiC Grown via Sublimation Method
4. Growth of 4H-polytype silicon carbide ingots on (10 % MathType!MTEF!2!1!+- % feaagaart1ev2aaatCvAUfKttLearuqr1ngBPrgarmWu51MyVXguY9 % gCGievaerbd9wDYLwzYbWexLMBbXgBcf2CPn2qVrwzqf2zLnharyav % P1wzZbItLDhis9wBH5garqqtubsr4rNCHbGeaGqiVu0Je9sqqrpepC % 0xbbL8F4rqqrFfpeea0xe9Lq-Jc9vqaqpepm0xbba9pwe9Q8fs0-yq % aqpepae9pg0FirpepeKkFr0xfr-xfr-xb9adbaqaaeGaciGaaiaabe % qaamaaeaqbaaGcbaGafGymaeJbaebaaaa!3CDF! $$ \bar 1 $$ 0) seeds
5. Reduction of Dislocations in the Bulk Growth of SiC Crystals
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Frequency dispersion of capacitance–voltage characteristics in wide bandgap semiconductor-electrolyte junctions;Semiconductor Science and Technology;2016-11-14
2. Polytype inclusions and polytype stability in silicon-carbide crystals;Semiconductors;2016-04
3. Observation of polytype stability in different-impurities-doped 6H–SiC crystals;Diamond and Related Materials;2011-04
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