Author:
Ohtani Noboru,Katsuno Masakazu,Tsuge Hiroshi,Fujimoto Tatsuo,Nakabayashi Masashi,Yashiro Hirokatsu,Sawamura Mitsuru,Aigo Takashi,Hoshino Taizo
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Sublimation growth of SiC single crystalline ingots on faces perpendicular to the (0001) basal plane
2. Silicon Carbide;Ohtani,2003
3. N. Ohtani, M. Katsuno, H. Tsuge, T. Fujimoto, M. Nakabayashi, H. Yashiro, M. Sawamura, T. Aigo, T. Hoshino, J. Cryst. Growth, to be published.
4. Large Diameter 4H-SiC Substrates for Commercial Power Applications
5. Dislocation conversion in 4H silicon carbide epitaxy
Cited by
20 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献