Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metal–organic chemical vapor deposition-Reference-Cited by-同舟云学术

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Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metal–organic chemical vapor deposition

Published:2011-03 Issue:1 Volume:318 Page:423-426
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Fang H.,Sang L.W.,Zhu W.X.,Long H.,Yu T.J.,Yang Z.J.,Zhang G.Y.

Funder

National Natural Science Foundation of China

National Key Basic R&D Project (973) of China

the National High-tech Research and Development Program in China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

2. X-ray diffraction reciprocal lattice space mapping ofa-plane AlGaN on GaN

3. Reactor-pressure dependence of growth of a-plane GaN on r-plane sapphire by MOVPE

4. Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells

5. Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect reduction methods for III-nitride heteroepitaxial films grown along nonpolar and semipolar orientations;Semiconductor Science and Technology;2012-01-19

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