Effect of crucible cover material on impurities of multicrystalline silicon in a unidirectional solidification furnace
Author:
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
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5. A Czochralski Silicon Growth Technique which Reduces Carbon to the Order of 1014 per Cubic Centimeter
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2. Design and Numerical Study of Argon Gas Diversion System Using Orthogonal Experiment to Reduce Impurities in Large-Sized Casting Silicon;Crystals;2022-04-17
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4. Reduction of Carbon and Oxygen Impurities in mc-Silicon Ingot Using Molybdenum Gas Shield in Directional Solidification Process;Silicon;2020-10-22
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