Reduction of Carbon and Oxygen Impurities in mc-Silicon Ingot Using Molybdenum Gas Shield in Directional Solidification Process
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00775-w.pdf
Reference26 articles.
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4. Jiptner K, Gao B, Harada H, Miyamura Y, Fukuzawa M, Kakimoto K (2014) Takashi Sekiguchi. J Cryst Growth 408:19–24
5. Lin HK, Wu MC, Chen CC, Lan CW (2016) Evolution of grain structures during directional solidification of silicon wafers. J Cryst Growth 439:40–46
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