Influence of Argon Gas Flow Rate on Oxygen and Carbon Impurities Concentration in Multicrystalline Silicon Grown by Directional Solidification Furnace: Numerical and Experimental Investigation-Reference-Cited by-同舟云学术

Influence of Argon Gas Flow Rate on Oxygen and Carbon Impurities Concentration in Multicrystalline Silicon Grown by Directional Solidification Furnace: Numerical and Experimental Investigation

Published:2022-09-27 Issue: Volume: Page:
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Sugunraj S.,Aravindan G.,Srinivasan M.,Ramasamy P.

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-022-02097-5.pdf

Reference30 articles.

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