Investigation of Solid-Liquid Interface Effects on the Impurity Concentration in the DS Grown Mc-Si Ingot by using C-Clamp Insulation Block for Solar Cell Applications: Numerical Analysis-Reference-Cited by-同舟云学术

Investigation of Solid-Liquid Interface Effects on the Impurity Concentration in the DS Grown Mc-Si Ingot by using C-Clamp Insulation Block for Solar Cell Applications: Numerical Analysis

Published:2023-12-30 Issue: Volume: Page:
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Sekar Sugunraj,Manikkam Srinivasan,Perumalsamy Ramasamy

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-023-02839-z.pdf

Reference36 articles.

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2. Sugunraj S, Kumar MA, Keerthivasan T, Srinivasan M, Arivanandhan M, Nallusamy N, Ramasamy P (2022) Analysis of grain structures and impurity distribution in mc-silicon grown by directional solidification: Computational and experimental approach. Appl Surf Sci Adv 12:100346

3. Wen S, Jiang D, Shi S, Tan Y, Li P, Gu Z, Zhang X (2016) Determination and controlling of crystal growth rate during silicon purification by directional solidification. Vacuum 125:75–80

4. Bharathwaj M, Sugunraj S, Karuppasamy P, Srinivasan M, Ramasamy P (2023) Effect of argon flow rate on mc-silicon ingot grown by DS process for PV application: a numerical investigation of non-metallic impurities. Silicon. https://doi.org/10.1007/s12633-023-02490-8

5. Wang S, Fang HS, Zhao CJ, Zhang Z, Zhang MJ, Xu JF (2015) Gas flow optimization during the cooling of multicrystalline silicon ingot. Int J Heat Mass Transf 84:370–375. https://doi.org/10.1016/j.ijheatmasstransfer.2015.01.035

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