Effect of Argon Flow Rate on mc-Silicon Ingot Grown by DS Process for PV Application: A Numerical Investigation of Non-Metallic Impurities-Reference-Cited by-同舟云学术

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Effect of Argon Flow Rate on mc-Silicon Ingot Grown by DS Process for PV Application: A Numerical Investigation of Non-Metallic Impurities

Published:2023-05-02 Issue:14 Volume:15 Page:5937-5946
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Bharathwaj M.,Sugunraj S.,Karuppasamy P.,Srinivasan M.,Ramasamy P.

Funder

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-023-02490-8.pdf

Reference38 articles.

1. Huang F, Chen R, Guo J, Ding H, Su Y, Yang J, Fu H (2014) Electrical resistivity distribution of silicon ingot grown by cold crucible continuous melting and directional solidification. Mater Sci Semicond Process 23:14–19

2. Hässler C, Höfs HU, Koch W, Stollwerck G, Müller A, Karg D, Pensl G (2000) Formation and annihilation of oxygen donors in multi-crystalline silicon for solar cells. Mater Sci Eng B 71(1–3):39–46

3. Du G, Chen N, Rossetto P (2008) On-wafer investigation of SiC and Si3N4 inclusions in multi-crystalline Si grown by directional solidification. Sol Energy Mater Sol Cells 92(9):1059–1066

4. Breitenstein O, Rakotoniaina JP, Al Rifai MH, Werner M (2004) Prog Photovoltaics Res Appl 12:529

5. Qi X, Xue Y, Su W, Ma W, Liu L (2021) Effect of Argon Flow on Oxygen and Carbon Coupled Transport in an Industrial Directional Solidification Furnace for Crystalline Silicon Ingots. Crystals 11(4):421

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation analysis on furnace pressure for reducing the impurities concentrations distribution during the growth of mc-Si ingot by DS process: Solar cell applications;Chemical Physics;2024-07

2. Effect of Silicon Nitride Coated Carbon Crucible on Multi-Crystalline Silicon Ingot during Directional Solidification Process: Numerical Simulation;Silicon;2024-05-31

3. Numerical Investigation of Argon Gas Flow Patterns and Their Effects on Mc-Si Ingot Growth Process: Solar Cell Applications;Silicon;2024-03-04

4. Investigation of Solid-Liquid Interface Effects on the Impurity Concentration in the DS Grown Mc-Si Ingot by using C-Clamp Insulation Block for Solar Cell Applications: Numerical Analysis;Silicon;2023-12-30

5. A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications;Crystal Research and Technology;2023-11-28

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