Influence of Extended Defects and Native Impurities on the Electrical Properties of Directionally Solidified Polycrystalline Silicon-Reference-Cited by-同舟云学术

Influence of Extended Defects and Native Impurities on the Electrical Properties of Directionally Solidified Polycrystalline Silicon

Published:1988-01-01 Issue:1 Volume:135 Page:155-165
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Pizzini S.¹²³,Sandrinelli A.¹²³,Beghi M.¹²³,Narducci D.¹²³,Allegretti F.¹²³,Torchio S.¹²³,Fabbri G.¹²³,Ottaviani G. P.¹²³,Demartin F.¹²³,Fusi A.¹²³

Affiliation:

1. Department of Physical Chemistry and Electrochemistry, University of Milano, Milano, Italy

2. Department of Physics, University of Modena, Modena, Italy

3. Institute of Structural Inorganic Chemistry and Department of Inorganic and Metallorganic Chemistry, University of Milano, Milano, Italy

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2095543/pdf

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