Conversion of silicon wafer type from perfect-interstitial to perfect-vacancy by rapid thermal process-Reference-Cited by-同舟云学术

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Conversion of silicon wafer type from perfect-interstitial to perfect-vacancy by rapid thermal process

Published:2024-04 Issue: Volume:632 Page:127658
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Giannattasio Armando^ORCID

Publisher

Elsevier BV

Reference12 articles.

1. The mechanism of swirl defects formation in silicon;Voronkov;J. Cryst. Growth,1982

2. On the properties of the intrinsic point defects in silicon: a perspective from crystal growth and wafer processing;Falster;Phys. Stat. Sol. (b),2000

3. Properties of vacancies and self-interstitials in silicon deduced from crystal growth, wafer processing, self-diffusion and metal diffusion;Voronkov;Mater. Sci. Eng. B,2006

4. The engineering of intrinsic point defects in silicon wafers and crystals;Falster;Mater. Sci. Eng. B,2000

5. 300 mm czochralski silicon wafers optimized with respect to voids with laterally homogeneous oxygen precipitation;Kissinger;Phys. B,2012

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