300mm Czochralski silicon wafers optimized with respect to voids with laterally homogeneous oxygen precipitation
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. The composition of octahedron structures that act as an origin of defects in thermal SiO2on Czochralski silicon
2. The mechanism of swirl defects formation in silicon
3. Extremely proximity gettering for semiconductor devices
4. Vacancies in Growth-Rate-Varied CZ Silicon Crystal Observed by Low-Temperature Ultrasonic Measurements
5. Effects of nitrogen on oxygen precipitation in silicon
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