Extremely proximity gettering for semiconductor devices-Reference-Cited by-同舟云学术

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Extremely proximity gettering for semiconductor devices

Published:2006-10 Issue:2-3 Volume:134 Page:249-256
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Park Jea-Gun,Lee Gon-Sub,Lee Jin-Seo,Kurita Kazunari,Furuya Hisashi

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference40 articles.

1. Gettering mechanisms in silicon

2. Injection Level Spectroscopy: A Novel Non-Contact Contamination Analysis Technique in Silicon

3. Identification and Quantification of Transition Metal Impurities in Czochralski Silicon Wafers using Microwave Photoconductive Decay Lifetime Measurements

4. Breakdown in silicon oxides—correlation with Cu precipitates

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1. Near‐Surface Defect Control by Vacancy Injecting/Out‐Diffusing Rapid Thermal Annealing;physica status solidi (a);2019-08-05

2. Effect of rapid thermal annealing on bulk micro-defects and plastic deformation in silicon during high temperature processing;Materials Science in Semiconductor Processing;2018-10

3. Characterization of internal gettering of copper in the vertical direction of p-type silicon wafer;Solid-State Electronics;2018-10

4. (Invited) Oxygen in Silicon: End of the Story?;ECS Transactions;2018-07-23

5. Study on defect annealing potential and bulk micro defect formation using high temperature RTA conditions for Cz‐grown silicon;physica status solidi c;2017-06-21

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