Author:
Lee J.,Wang K.L.,Chen H.-T.,Chen L.-J.
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. H. Shang, H. Okorn-Schmidt, K.K. Chan, M. Copel, J.A. Ott, P.M. Kozlowski, S.E. Steen, S.A. Cordes, H.S.P. Wong, E.C. Jones, W.E. Haensch, in: IEEE International Electronic Device Meeting Technology Digest, (2002) p. 441.
2. High-quality Ge films on Si substrates using Sb surfactant-mediated graded SiGe buffers
3. Experimental study of a surfactant-assisted SiGe graded layer and a symmetrically strained Si/Ge superlattice for thermoelectric applications
4. Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy
5. New approach to the high quality epitaxial growth of lattice‐mismatched materials
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献