High-quality Ge films on Si substrates using Sb surfactant-mediated graded SiGe buffers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1421092
Reference13 articles.
1. New infrared detector on a silicon chip
2. High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers
3. Thin film photodetectors grown epitaxially on silicon
4. Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si
5. Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates
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3. Low-Temperature Fabrication of Wafer-Bonded Ge/Si p-i-n Photodiodes by Layer Exfoliation and Nanosecond-Pulse Laser Annealing;IEEE Transactions on Electron Devices;2019-03
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