Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Growth and characteristics of Fe-doped GaN
2. Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs
3. AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy
4. Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates
5. Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs
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1. Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate;Science China Information Sciences;2024-05-23
2. Undoped β-Ga2O3 Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate;ACS Applied Electronic Materials;2024-01-04
3. Modelling of impedance dispersion in lateral β-Ga2O3 MOSFETs due to parallel conductive Si-accumulation layer;Applied Physics Express;2023-04-01
4. Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer;Applied Physics Letters;2021-02-15
5. Characterization of MOCVD regrown p-GaN and the interface properties for vertical GaN power devices;Semiconductor Science and Technology;2020-11-25
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