Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer-Reference-Cited by-同舟云学术

Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer

Published:2021-02-15 Issue:7 Volume:118 Page:072103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu T.¹²^ORCID,Watanabe H.²,Nitta S.²,Wang J.²,Yu G.²^ORCID,Ando Y.³,Honda Y.²,Amano H.¹²,Tanaka A.¹²,Koide Y.¹²^ORCID

Affiliation:

1. National Institute for Materials Science, Tsukuba 987-6543, Japan

2. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan

3. Department of Electronics, Nagoya University, Nagoya 464-8601, Japan

Funder

MEXT

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0034584

Reference30 articles.

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5. S. Arulkumaran , V. Lin , S. Dolmanan , G. I. Ng , S. Vicknesh , J. P. Y. Tan , S. Teo , M. K. Kumar , and S. Tripathy , in 70th Device Research Conference (2012), pp. 59–60.

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