Breakdown Mechanisms and Scaling Technologies of AlGaN/GaN HEMTs
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-19-2165-0_2
Reference23 articles.
1. F. Zeng et al., A comprehensive review of recent progress on GaN high electron mobility transistors: Devices, fabrication and reliability, Electron. 7, (12) (2018). https://doi.org/10.3390/electronics7120377
2. G. Meneghesso, M. Meneghini, E. Zanoni, Breakdown mechanisms in AlGaN/GaN HEMTs: An overview, Jpn J. Appl. Phys. 53(10). Japan Soc. Appl. Phys. (2014). https://doi.org/10.7567/JJAP.53.100211
3. A. Goswami, R.J. Trew, G.L. Bilbro, Modeling of the gate leakage current in AlGaN/GaN HFETs. IEEE Trans. Electron Devices 61(4), 1014–1021 (2014). https://doi.org/10.1109/TED.2014.2302797
4. A. Wang, L. Zeng, W. Wang, Simulation of gate leakage current of AlGaN/GaN HEMTs: Effects of the gate edges and self-heating. ECS J. Solid State Sci. Technol. 6(11), S3025–S3029 (2017). https://doi.org/10.1149/2.0031711jss
5. R. Chu et al., 1200-V normally off GaN-on-Si field-effect transistors with low dynamic on -resistance. IEEE Electron Device Lett. 32(5), 632–634 (2011). https://doi.org/10.1109/LED.2011.2118190
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