Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4773510
Reference23 articles.
1. High-power AlGaN/GaN HEMTs for Ka-band applications
2. 55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge
3. GaN-Based RF Power Devices and Amplifiers
4. Dislocation generation in GaN heteroepitaxy
5. Quantum and classical scattering times due to charged dislocations in an impure electron gas
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