High-purity GaN epitaxial layers for power devices on low-dislocation-density GaN substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. High voltage (450 V) GaN Schottky rectifiers
2. Vertical and lateral GaN rectifiers on free-standing GaN substrates
3. Electrical characterization of GaN p-n junctions with and without threading dislocations
4. Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
5. Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride
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