III–V dilute nitride-based multi-quantum well solar cell-Reference-Cited by-同舟云学术

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III–V dilute nitride-based multi-quantum well solar cell

Published:2007-04 Issue: Volume:301-302 Page:993-996
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Freundlich A.,Fotkatzikis A.,Bhusal L.,Williams L.,Alemu A.,Zhu W.,Coaquira J.A.H.,Feltrin A.,Radhakrishnan G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. M. Henini, Dilute Nitride Semiconductors, Elsevier, 2005, ISBN: 0080445020.

2. Breakeven criteria for the GaInNAs junction in GaInP/GaAs/GaInNAs/Ge four-junction solar cells

3. Deep levels in p-type InGaAsN lattice matched to GaAs

4. Effects of thermal annealing on deep-level defects and minority-carrier electron diffusion length in Be-doped InGaAsN

5. Doping and carrier transport inGa1−3xIn3xNxAs1−xalloys

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