Doping and carrier transport inGa1−3xIn3xNxAs1−xalloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.113308/fulltext
Reference9 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Room-temperature pulsed operation of 1.3 [micro sign]m GaInNAs/GaAs laser diode
3. GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes
4. Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
5. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
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