MBE growth of InAs self-assembled quantum dots embedded in GaNAs strain-compensating layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Single-electron phenomena in semiconductors
3. Quantum dot solar cells
4. Suppression of temperature sensitivity of interband emission energy in 1.3-μm-region by an InGaAs overgrowth on self-assembled InGaAs/GaAs quantum dots
5. Long-wavelength light emission from InAs quantum dots covered by GaAsSb grown on GaAs substrates
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1. The binding energy of a hydrogenic impurity in self-assembled double quantum dots;Chinese Physics B;2011-12
2. High-density GaAs/AlGaAs quantum dots formed on GaAs (311)A substrates by droplet epitaxy;Journal of Crystal Growth;2009-03
3. Growth of InGaAs/GaNAs strain-compensated quantum dot superlattice on GaAs (311)B by molecular beam epitaxy;Journal of Crystal Growth;2009-03
4. Optical properties of multi-stacked InAs/GaNAs strain-compensated quantum dots;Journal of Crystal Growth;2008-04
5. Hydrogenic impurity binding energy in self-assembled GaAs∕Ga1−xAlxAs quantum rings;Journal of Applied Physics;2008-03-15
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