Optical properties of multi-stacked InAs/GaNAs strain-compensated quantum dots
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Non-classical Photon Emission from a Single InAs/InP Quantum Dot in the 1.3-µm Optical-Fiber Band
2. Coherent dynamics of excitons in a stack of self-assembled InAs quantum dots at 1.5-μm waveband
3. Multidimensional quantum well laser and temperature dependence of its threshold current
4. Theory of optical signal amplification and processing by quantum-dot semiconductor optical amplifiers
5. Quantum dot solar cells
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1. Interdot spacing dependence of electronic structure and properties of multistacked InGaAs quantum dots fabricated without strain compensation technique;Japanese Journal of Applied Physics;2018-05-24
2. Light concentration effects on the performance of the p-i-n quantum dot solar cells: A simulation study;Optik;2014-11
3. Impact of GaNAs strain compensation layer on the electronic structure of InAs/GaAs quantum dots;Chinese Physics B;2013-01
4. Extremely long carrier lifetime over 200 ns in GaAs wall-inserted type II InAs quantum dots;Applied Physics Letters;2012-03-12
5. A theoretical approach on the strain-induced dislocation effects in the quantum dot solar cells;Solar Energy;2012-03
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