Hydrogenic impurity binding energy in self-assembled GaAs∕Ga1−xAlxAs quantum rings
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2887994
Reference24 articles.
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2. MBE growth of InAs self-assembled quantum dots embedded in GaNAs strain-compensating layers
3. Formation of InAs self-assembled quantum rings on InP
4. Complex quantum ring structures formed by droplet epitaxy
5. In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy
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