Dependence of stacking fault and twin densities on deposition conditions during 3C-SiC heteroepitaxial growth on on-axis Si(001) substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Structural defects in 3C–SiC grown on Si by supersonic jet epitaxy
2. Defect formation in the solid phase epitaxial growth of GaAs films on Si (001) substrate
3. Surface morphology of cubic SiC(100) grown on Si(100) by chemical vapor deposition
4. Surface-Structure-Controlled Heteroepitaxial Growth of3C–SiC(001)3×2on Si(001): Simulations and Experiments
5. 3C-SiC hetero-epitaxial growth on undulant Si(001) substrate
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2. Generation of a Charge Carrier Gradient in a 3C-SiC/Si Heterojunction with Asymmetric Configuration;ACS Applied Materials & Interfaces;2021-11-09
3. Recrystallization and activation of ultra-high-dose phosphorus-implanted silicon using multi-pulse nanosecond laser annealing;Japanese Journal of Applied Physics;2020-02-20
4. Effect of hydrogen flow on microtwins in 3C–SiC epitaxial films by laser chemical vapor deposition;Thin Solid Films;2019-05
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