Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H–SiC (112¯0)-Reference-Cited by-同舟云学术

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Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H–SiC (112¯0)

Published:2007-03 Issue:1 Volume:300 Page:83-89
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bishop S.M.,Park J.-S.,Gu J.,Wagner B.P.,Reitmeier Z.J.,Batchelor D.A.,Zakharov D.N.,Liliental-Weber Z.,Davis R.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

2. Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

3. Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy

4. Growth of GaN film on a-plane sapphire substrates by plasma-assisted MOCVD

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1. Research on epitaxial of 250 nm high quality GaN HEMT based on AlN surface leveling technology;Applied Surface Science;2020-04

2. Progress in Preparation of Patterned Sapphire Substrate for GaN-based Light Emitting Diodes;Journal of Inorganic Materials;2012-09-17

3. Two-inch a-plane (11-20) 6H-SiC Crystal Grown by Using the PVT Method from a Small Rectangular Substrate;Journal of the Korean Physical Society;2011-05-13

4. FORTHCOMING GALLIUM NITRIDE BASED POWER DEVICES IN PROMPTING THE DEVELOPMENT OF HIGH POWER APPLICATIONS;Modern Physics Letters B;2011-01-20

5. Non-Polar SiC Crystal Growth with m-Plane(1-100) and a-Plane(11-20) by PVT Method;Materials Science Forum;2010-04

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