Growth of GaN film on a-plane sapphire substrates by plasma-assisted MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes
3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
4. Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
5. Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy
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1. Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition;Scientific Reports;2024-05-13
2. Comprehensive characterization of low-damaged GaN surface exposed to NH3 plasma toward plasma-induced metalorganic chemical vapor deposition;Applied Surface Science;2022-07
3. Novel Epitaxy for Nitride Semiconductors Using Plasma Technology;physica status solidi (a);2020-11-12
4. Measurements of nitrogen atom density in a microwave‐excited plasma jet produced under moderate pressures;IEEJ Transactions on Electrical and Electronic Engineering;2020-07-22
5. Effects of N2 and NH3 plasma exposure on the surface topography of p-GaN under quasi-atmospheric pressure;Surfaces and Interfaces;2019-03
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