Non-Polar SiC Crystal Growth with m-Plane(1-100) and a-Plane(11-20) by PVT Method

Abstract

The present research was focused to produce 2 inch wafers from small rectangular seeds and to investigate the quality of non-polar SiC substrates grown by a conventional PVT method. The non-polar SiC seeds were prepared by cutting along <0001> direction of 6H-SiC crystal grown on (0001) basal plane. As SiC ingot grows, many defects in connected region were gradually diminished. While the full width at half maximum (FWHM) values of m-plane SiC substrate measured along a-direction and c-direction were 60 arcsec and 70 arcsec, respectively, and the FWHM values of a-plane SiC substrate measured along m-direction and c-direction were 27 arcsec and 31 arcsec respectively. The stacking faults lying in the basal plane can be detected by molten KOH etching as linear etch pits extending along <0001> on the (11-20) surface and the carrier concentration was observed by Raman spectrum.