Analysis of microsegregation in RF-heated float zone growth of silicon—comparison to the radiation-heated process
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Experimental influence of some growth parameters upon the shape of the melt interfaces and the radial phosphorus distribution during float-zone growth of silicon single crystals
2. Study on silicon melt convection during the RF-FZ crystal growth process
3. W. Keller, A. Mühlbauer, Floating Zone Silicon, Vol. 5, 2nd Edition, Marcel Dekker, Inc., New York, ISBN: 0-8247-1167-X, 1981.
4. Electrodynamic convection in silicon floating zones
5. System of Mathematical Models for the Analysis of Industrial FZ-Si-Crystal Growth Processes
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