Experimental influence of some growth parameters upon the shape of the melt interfaces and the radial phosphorus distribution during float-zone growth of silicon single crystals-Reference-Cited by-同舟云学术

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Experimental influence of some growth parameters upon the shape of the melt interfaces and the radial phosphorus distribution during float-zone growth of silicon single crystals

Published:1976-12 Issue:2 Volume:36 Page:215-231
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Keller W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Transient Segregation Effects in Czochralski Growth;Carruthers;Crystal Growth, Review of Theories and Experiments and Characterization,1975

2. The Shape of Melt-Crystal Interfaces During Float Zoning of Silicon

3. Semiconductor Silicon;Ciszek,1969

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth;Crystal Research and Technology;2018-02-06

2. Impurities in Silicon Wafers;Crystal Growth and Evaluation of Silicon for VLSI and ULSI;2014-12-08

3. Thermocapillary instabilities in a laterally heated liquid bridge with end wall rotation;Physics of Fluids;2011-10

4. Analysis of microsegregation in RF-heated float zone growth of silicon—comparison to the radiation-heated process;Journal of Crystal Growth;2004-01

5. Influence of growth parameters and melt convection on the solid–liquid interface during RF-floating zone crystal growth of intermetallic compounds;Journal of Crystal Growth;2001-03

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