System of Mathematical Models for the Analysis of Industrial FZ-Si-Crystal Growth Processes-Reference-Cited by-同舟云学术

System of Mathematical Models for the Analysis of Industrial FZ-Si-Crystal Growth Processes

Published:1999-02 Issue:2 Volume:34 Page:217-226
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Mühlbauer A.,Muiznieks A.,Raming G.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference6 articles.

1. , , , , : Experimantal Confirmation of a Numerical Model of Doping Distribution for Floating-Zone Silicon Growth with the Needle Eye Tequnique, 193rd Society Meeting, Spring 1998, San Diego, Meeting Abstracts, Vol. 98-1, No. 514

2. Interface shape, heat transfer and fluid flow in the floating zone growth of large silicon crystals with the needle-eye technique

3. Analysis of the dopant segregation effects at the floating zone growth of large silicon crystals

4. , : Modellierung der Widerstandsverteilung in zonengezogenen Siliziumkristallen. 28. Jahrestagung der deutschen Gesellschaft für Kristallwachstum und Kristallzüchtung (DGKK) (March 1998)

5. : Crystals Vol. 12, Springer Verlag, Berlin Heidelberg 1988

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Floating Zone Growth of Silicon;Handbook of Crystal Growth;2015

2. Floating Zone Crystal Growth;Crystal Growth Processes Based on Capillarity;2010-04-20

3. Analysis of microsegregation in RF-heated float zone growth of silicon—comparison to the radiation-heated process;Journal of Crystal Growth;2004-01

4. Industrial challenges for numerical simulation of crystal growth;Open Physics;2004-01-01

5. Mathematical modelling of the industrial growth of large silicon crystals by CZ and FZ process;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;2003-03