Properties of self-assembled InAs quantum dots grown by various growth techniques
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
3. Multidimensional quantum well laser and temperature dependence of its threshold current
4. 1.3 μm photoluminescence from InGaAs quantum dots on GaAs
5. Optical response at 1.3μm and 1.5μm with InAs quantum dots embedded in a pure GaAs matrix
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1. A systematic post-growth thermal annealing step for receding size inhomogeneity inside multiple InAs/Inx(Ga)1-xAs sub-monolayer quantum-dot heterostructures;Photonic and Phononic Properties of Engineered Nanostructures XII;2022-03-05
2. Photoluminescence spectra of InAs quantum dots embedded in GaAs heterostructure;Journal of Luminescence;2013-04
3. Temperature dependent photoluminescence investigation of the effect of growth pause induced ripening in InAs/GaAs quantum dot heterostructures;Materials Research Bulletin;2012-03
4. Investigation of the effect of larger monolayer coverage in the active layer of bilayer InAs/GaAs quantum-dot structure and effects of post-growth annealing;Applied Physics A;2010-09-02
5. Investigation of the effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dot heterostructures;Superlattices and Microstructures;2009-10
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