Optical response at 1.3μm and 1.5μm with InAs quantum dots embedded in a pure GaAs matrix
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
3. Molecular-beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs
4. Nature of strained InAs three‐dimensional island formation and distribution on GaAs(100)
5. Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3μm
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2. Effect of Sb incorporation on the electronic structure of InAs quantum dots;Physical Review B;2013-08-08
3. Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1−xGex/Si substrate;Journal of Crystal Growth;2011-05
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5. Defect investigation of stacked self-assembled InAs/GaAs quantum dot lasers;physica status solidi (c);2007-07
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