Defect investigation of stacked self-assembled InAs/GaAs quantum dot lasers-Reference-Cited by-同舟云学术

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Defect investigation of stacked self-assembled InAs/GaAs quantum dot lasers

Published:2007-07 Issue:8 Volume:4 Page:2986-2991
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Ng J.,Bangert U.,Missous M.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference12 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Gain and the threshold of three-dimensional quantum-box lasers

3. Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

4. Optical response at 1.3μm and 1.5μm with InAs quantum dots embedded in a pure GaAs matrix

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices;IET Optoelectronics;2014-04

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