Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1−xGex/Si substrate-Reference-Cited by-同舟云学术

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Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1−xGex/Si substrate

Published:2011-05 Issue:1 Volume:323 Page:426-430
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Liang Y.Y.,Yoon S.F.,Ngo C.Y.,Tanoto H.,Chen K.P.,Loke W.K.,Fitzgerald E.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. Quantum Dot Lasers;Ustinov,2003

2. Room temperature lasing from InGaAs quantum dots

3. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

4. Optical response at 1.3μm and 1.5μm with InAs quantum dots embedded in a pure GaAs matrix

5. Quantum dots: lasers and amplifiers

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electroluminescence at 1.3 µm from InAs/GaAs quantum dots monolithically grown on Ge/Si substrate by metal organic chemical vapor deposition;Japanese Journal of Applied Physics;2016-09-15

2. Four-step Method for Growing High-quality GaAs Films on Si Substrate by Molecular Beam Epitaxy;Journal of Inorganic Materials;2016

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